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| Name: |
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Jeffrey Hopwood |
| Title: |
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Professor and Chair
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| Departmental Affiliation: |
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Electrical and Computer Engineering
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| Degrees: |
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PhD in Electrical Engineering, Michigan State University, 1990 |
| Expertise: |
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Plasma Physics, Integrated Circuit Fabrication, Semiconductors, and Microelectronics
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| Major Awards: |
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National Science Foundation CAREER Award / General Electric Foundation / Master Teacher |
| E-mail: |
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hopwood@ece.tufts.edu
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| Other websites: |
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http://www.ece.tufts.edu/~hopwood
http://www.ece.tufts.edu/~hopwood/lab
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| Scholarship & Research: |
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Recent Publications
"Microplasma Trapping of Particles," J. Xue and J. Hopwood, IEEE Transactions on Plasma Science, Vol. 35, (Oct. 2007).
Ionized Physical Vapor Deposition, J. Hopwood, ed. and co-author (Academic Press, San Diego, 2000), ISBN 0-12-533027-8.
"On-wafer Tunable Deposition Rates using Ionized Physical Vapor
Deposition," D. Mao, L. Wang, and J. Hopwood, Plasma Processes and
Polymers, Vol. 4, 19-26 (2007).
“A microfabricated atmospheric-pressure microplasma source operating
in air,” J. Hopwood, F. Iza, S. Coy, and D. Fenner, Journal of Physics
D: Applied Physics, Vol. 38, 1698-1703 (2005).
“Split-ring Resonator Microplasma: Microwave Model, Plasma Impedance
and Power Efficiency,” F. Iza and J. Hopwood, Plasma Sources - Science
and Technology (Institute of Physics), Vol.14, 397-406 (2005).
“Self-organized filaments, striations and other non-uniformities in
non-thermal atmospheric microwave excited microdischarges,” Felipe Iza
and Jeffrey A. Hopwood, IEEE Transactions on Plasma Science, Vol.
33(2) 306-307 (2005). {2}
“Physical mechanisms for anisotropic plasma etching of cesium
iodide,” Xiaoji Yang and Jeffrey A. Hopwood, Journal of Applied
Physics, Vol. 96(9), 4800-4806 (2004).
U.S. Patents
"Resonant radio frequency wave coupler apparatus using higher modes,"
J. Asmussen and J. Hopwood, U.S. Patent 5,081,398 (January 12, 1992).
"Radio frequency induction plasma processing system utilizing a
uniform-field coil," J.J.Cuomo, C.R. Guarnieri, J. Hopwood, and S.J.
Whitehair, U.S. Patent 5,280,154 (January 18, 1994).
"Apparatus for enhanced inductive coupling to plasmas with reduced
sputter contamination," J.J. Cuomo, C.R. Guarnieri, and J. Hopwood, U.S.
Patent 5,433,812 (July 18, 1995).
"Method for enhanced inductive coupling to plasmas with reduced
sputter contamination," J.J. Cuomo, C.R. Guarnieri, and J. Hopwood, U.S.
Patent 5,622,635 (April 22, 1997).
"Monolithic miniaturized inductively coupled plasma source," J.
Hopwood, U.S. Patent No. 5,942,855 (August 24, 1999).
"Method of coating edges with diamond-like carbon," J. Hopwood and D.
L. Pappas, U.S. Patent 6,077,572 (June 20, 2000).
"Low power plasma generator," J. Hopwood and F. Iza, US Patent
6,917,165, (July 12, 2005).
"Method of preparing electrical contacts used in switches," R. Morrison, N. McGruer, and J. Hopwood, US Patent 7,256,669 (August 14, 2007).
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