Faculty

Daniel F. Ryder, Jr.
Associate Professor
Dept. of Chemical & Biological Engineering
4 Colby Street, Rm. 275, Medford, MA 02155
Telephone: 617-627-3446 ~ Fax: 617-627-3991
daniel.ryder@tufts.edu


Education:
1974 B.S. Chemical Engineering, B.S. Paper Engineering, University of Massachusetts
1984 Ph.D. Chemical Engineering, Worcester Polytechnic Institute

Honors:

  • Cabot Foundation pre-Doctoral Research Fellow, 1981 - 1984

Research Interests, Areas, or Ongoing Projects:

  • Chemical Processing of Ceramics
  • Process Control Applications
  • Artificial Neural Network Applications

Selected Publications:
Suscavage, M.J. and D. F. Ryder, “Pulsed Laser Deposition of Aluminum Nitride on (0001) Oriented Single Crystal Zinc Oxide”, III-V Nitrides, Vol. 449 MRS Proceedings, F.A. Ponce, T.D. Moustakas, I. Akasaki, and B.A. Monemon, Eds., Materials Research Society, Warrendale, PA, (1997).

Ryder, D.F., “Synthesis and Properties of b -Diketonante-Modified Heterobimetallic Alkoxides”, USAF Rome Laboratory Research Report, September, (1994).

DeRouchmont, P.L., Suscavage, M.J., D.F. Ryder, “SP-MOD Process for High Tc Superconducting BSCCO-Ag Composite Tapes”, High Temperature Superconductors, MRS Proceedings, Materials Research Society, Pittsburgh, PA, (1995).

Ryder, D.F., and N. Raman, “Sol-Gel Processing of Nb-doped Pb(Zr,Ti)O3 Thin Films for Ferroelelctric Memory Applications”, J. Electronic Mater., 21(10), 973, (1992).

Ryder, D.F., and N. Raman, “Ferroelectric Properties of Nb-modified Pb(Zr,Ti)O3 Thin Films prepared by the Sol-Gel Method” in Proceedings of the 38th Sagamore Conference, U.S. Army Materials Technology Laboratory, T. Hynes, Ed., September, (1991).

Courses Taught:

  • ChBE 39 Applied Mathematics and Software for Chemical Engineers
  • ChBE 60 Chemical Process Design
  • ChBE 104 Separation Processes
  • ChBE 109 Process Dynamics and Control
  • EN 44 Microbrewery Engineering

 
© 2007 Tufts University School of Engineering. All rights reserved.
Web site designed, developed and maintained by ITS.